Enhancing ZnO/Si heterojunction photodetector performance for ultra high responsivity across wide spectral range

This study outlines strategies for the development of an ultra-high responsivity wide band ZnO/Si-based heterojunction photodetector (PD). The incorporation of a UV-enhanced Si-Photodiode introduces a novel approach to enhance PD performance and functionality, offering potential building blocks for innovative optoelectronic devices. The ZnO/Si heterojunction proves effective in modulating the generation, separation, and recombination of photo-generated electron–hole pairs throughout the optoelectronic process. Notably, the ZnO/Si PD operates across a wide spectral range, from ultraviolet to infrared, demonstrating enhanced quantum efficiency, responsivity, and detectivity, coupled with a reduction in dark current. Additionally, system parameters such as thickness, wavelength of activity, and bias voltage have been simulated to elucidate the electrical and optical characteristics of the heterojunction PD.