Al doping to promote optical transmissibility of ZnO thin films

We investigated the effect of Al doping on optical transmissibility of ZnO thin films and to develop a strategy for improving optical transmissibility in the manufacture of cell. Samples of Al doping ZnO thin films with different doping scales are fabricated to study the optical transmissibility. The results show that the transmissibility of Al doping ZnO film decreases with the Al doping content increasing from 0 to 15.79%. At the same time, the optical band gap of Al doping ZnO films increases with the increase of Al doping content, but when the Al doping content is more than 15.79%, the optical band gap change is not obvious. The maximum optical band gap of Al doping ZnO films is about 3.525 eV, it provides some theoretical reference value for band gap modulation of doped ZnO. The results can provide a theoretical reference for the research of ZnO-based transparent conductive films.