Innovative temperature-based texturization process for reducing reflectivity in boron-doped as-cut multi-crystalline silicon wafers

This research paper presents a comprehensive investigation into the reflectivity reduction of multi-crystalline silicon wafers through the application of two distinct etching conditions: room temperature (Case 1) and controlled temperature (50 °C) (Case 2). In both cases, the etchants employed consist of HF + H₂O₂ + CH₃COOH (1:3:2), with varying etching durations of 2, 5, 10, and 15 min. To quantify the reduction in reflectivity, a UV–Vis spectrophotometer was employed. Surface morphology was examined using optical microscopy and scanning electron microscopy. Additionally, X-ray diffraction was utilized to investigate the grain orientation of mc-Si, and Fourier transform infrared spectroscopy was applied to analyse the reduction of oxidation in mc-Si wafer grains before and after chemical etching. The reduction of reflectivity in mc-Si wafers with implications for enhancing their photovoltaic efficiency and overall performance in solar cell applications.