Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Microwave plasma chemical vapor deposition (MPCVD) is regarded as one of the most promising techniques for the preparation of large-scale and high-quality epitaxial single-crystal diamonds. This review paper provides an overview of recent advancements in MPCVD single-crystal diamond growth, including discussions on the growth mechanism, substrate holder design, and seed crystal screening and pretreatment for achieving homogeneous epitaxial single-crystal diamond. Key growth parameters such as temperature, methane concentration, power density, etc., are investigated to guide the attainment of optimal growth conditions. Furthermore, critical growth techniques like three-dimensional growth, repeated growth, and mosaic splicing are analyzed to enhance the area coverage of single-crystal diamonds. The work on achieving low defect and high purity growth is also elucidated. Additionally, this paper discusses the progress made in n-type and p-type doping of diamond materials. Finally, a summary is provided highlighting the challenges encountered during MPCVD single-crystal diamonds growth.