Influence of ionizing radiation on admittance measurements of Au/TiO₂/n-Si (MIS) capacitor

This study aimed to investigate the influence of ionizing radiation on the admittance measurements of Titanium dioxide (TiO₂)-based metal-insulator-semiconductor (MIS) capacitor. The capacitor was irradiated to a cumulative dose of 100 kGy using a ⁶⁰Co-gamma (γ) source. The electrical admittance (Y = G + iωC) measurements of the MIS capacitor were performed before and after exposure to gamma irradiation for four different frequencies (1, 10, 100 and 500 kHz). Gamma irradiation leads to changes in the capacitance/conductance versus voltage (C/G–V) characteristics. The C and G showed a decrease by increasing the radiation dose and frequency. This decrease is attributed to the interface traps and oxide-trapped charges created during the gamma irradiation. The obtained results showed that the prepared MIS capacitor have great potential for dosimetry applications.