Chemical states, structural, electronic possessions, and conduction phenomena of Ti/MoO₃/p-InP heterojunctions with a high-k molybdenum trioxide interlayer

Ti/MoO₃/p-InP/Pt heterojunctions (HJs) are constructed, incorporating an e-beam-coated interlayer of molybdenum trioxide, to investigate its effect on the electrical features of Ti/p-InP metal–semiconductor (MS). Using AFM, XRD, and XPS procedures, the surface topography, structural, and chemical possessions of MoO₃ film are assessed, and the results establish that the MoO₃ layer is coated onto the p-InP. The electrical possessions of MS and HJ are performed using I–V and C–V procedures. HJ reveals a better rectifying manner with lower leakage current than the MS. Results disclose that the higher barrier height (Φ_b) is obtained for the HJ as compared to the MS, signifying that the MoO₃ layer modified the Φ_b of MS. Cheung’s and α(V)-V approaches are applied to acquire the Φ_b, n, and R_S of the MS and HJ. The Φ_b acquired using I–V, Cheung’s and α(V) versus V plot are more or less identical, demonstrating their reliability and authenticity. Lesser interface-state density (N_SS) was achieved for the HJ than the MS, representing that the MoO₃ layer was accountable for decreasing the N_SS. Outcomes reveal that ohmic and SCLC process in the forward bias of the MS and HJ diodes. The analysis says that the MoO₃ layer could be suitable for building MIS/MOS devices.