Investigation of Terp-Pyr/p-Si diode using complex impedance spectroscopy depending on measurement temperatures and frequencies

A unique Al/Terp-Pyr/p-Si/Al diode structure that has not before been presented was introduced in this paper. Utilizing capacitance-conductance-frequency (C-G-f) characteristics in the frequency range of 20 Hz− 1.5 MHz for four temperatures of 300 K, 325 K, 350 K, and 375 K, admittance analysis was carried out to disclose the impedance and dielectric properties of the diode. The appearance of interface states at the Terp-Pyr/p-Si interface leads to an increase in capacitance values at low frequencies. Using complex impedance spectroscopy, the impedance characteristics of the Al/ Terp-Pyr/p-Si/Al Schottky diode were examined. The fabricated diode’s dielectric, modulus, and ac conductivity properties were investigated in the same frequency and temperature range. It has been revealed that while \({\epsilon }^{{\prime }}\) ${ϵ}^{\prime }$ decreases up to high frequencies for all temperatures, it grows with temperature in the low-frequency zone. It becomes apparent that while the real component (M’) of modulus grows for all temperatures from low to high frequencies, it decreases at high frequencies as temperature rises. remarkably adjustable temperature, voltage, and frequency tuning of the dielectric constants \(({\epsilon }^{{\prime }},{{\epsilon }^{{\prime }}}^{{\prime }})\) $({ϵ}^{\prime },{{ϵ}^{\prime }}^{\prime })$ and dielectric loss tangent (tanδ). Additionally, the equivalent circuit of the Al/ Terp-Pyr/p-Si/Al Schottky diode and Cole-Cole diagrams were explored.