Analyzing temperature-dependent electrical properties of amorphous silicon solar cells: experimental and simulation approach

The electrical properties derived from the experimental dark current density–voltage characteristics of the solar cells, which ranged from 110 to 400 K, provide crucial information for analyzing performance losses and device efficiency. The device parameters of the amorphous silicon solar cells were determined using the one-diode model. An analysis was conducted to examine how temperature affects various factors such as the ideality factor (n), potential barrier height \({(\Phi }_{\text{b}})\) ${(\mathrm{\Phi }}_{\text{b}})$ , series resistance \(({\text{R}}_{\text{s}})\) $({\text{R}}_{\text{s}})$ , and shunt resistance \(({\text{R}}_{\text{s}})\) $({\text{R}}_{\text{s}})$ . To compare results, the same experimental data were fitted using different methods, including Lambert's Analytical Method, the Two Region Method, the variational least squares method, the Cheung's method. Finally, we performed a simulation on our solar cell using the SCAPS 1D software. This simulation took into account the parasitic resistance values found experimentally in this work and evaluated the effect of doping density of the a-SiC:H and Graphene oxide core layer, as well as the effect of temperature on the photovoltaic parameters of our solar cell.