Enhancing the performance of UV photodetection using bismuth oxide nanosheets synthesized by laser ablation method

This study investigates the effect of bismuth oxide nanosheets (Bi₂O₃-Nsh) on the performance of ZnO/Si UV photodetection. The nanosheets were synthesized using a laser ablation in liquid (LAL) method. The crystalline structures, morphologies, and optical attributes of the prepared three devices (ZnO/Si, Bi₂O₃-Nsh/Si, and Bi₂O₃-Nsh/ZnO/Si) were determined. The UV photodetection performance of the samples was evaluated by exposing them to 385 nm UV light at varying bias voltages. The Bi₂O₃-Nsh/ZnO/Si-based UV photodetectors showed a strong response to the UV light, and the I-V curve changed dramatically from 59 µA to 7 mA at 5 V voltage. In addition, Bi₂O₃-Nsh/ZnO/Si-based UV photodetectors under light have superior photo-response compared to the Bi₂O₃-Nsh/Si and ZnO/Si with the highest responsivity of 30.3 A/W, quantum efficiency of 98.58, the sensitivity of 17,200%, gain of 173, detectivity of 6.38 × 10¹⁰ Jones, and NEP 0.157 × 10^–12 W under illumination of 385 nm UV light at a bias voltage of 6 V. The research findings highlight the effectiveness of Bi₂O₃-Nsh in enhancing the performance of ZnO/Si systems and offer insights into the potential applications of the liquid’s laser ablation method in Bi₂O₃ nanosheet synthesis.