The effects of B-doping on the structure and performance of Si composite anode material

B-doped silicon (Si) nanoparticles are synthesized through chemical vapor deposition, followed by the fabrication of B-Si@G composite material through ball milling with artificial graphite. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses confirm the successful incorporation of B into Si. Scanning electron microscopy (SEM) images reveal the uniform adhesion of B-doped Si nanoparticles to the artificial graphite surface. Nanosized Si mitigates the adverse effects of volumetric changes in Si. Simultaneously, in B-doped Si, some of the Si atoms are replaced by B atoms, resulting in the generation of charge carriers and holes, which enhance the conductivity. Additionally, the inclusion of artificial graphite further enhances the composite’s conductivity and cycling performance. The initial charge-specific capacity of the synthesized B-Si@G material is 825.1 mAh·g⁻¹, accompanied by an initial coulombic efficiency of 82.8%. Furthermore, the reversible capacitance reaches 326.3 mAh·g⁻¹ even under a current density of 5 C, demonstrating the outstanding performance in multiple charge–discharge cycles.