Superior energy-delay-production in nanoscale field effect diode by embedded doped pockets for digital applications

Energy-Delay-Production (EDP) is one of the biggest issues in digital applications. This article describes a nanoscale field effect diode construction with superior EDP. The EDP refers to not only low OFF-state current and small gate capacitance but also to high ON-state current. The proposed device consists of embedded doped Pockets (EPs) in the drain and source regions at the channel's border and extended gates on these Pockets to increase the EDP performance in nano dimensions. Due to gate's work function engineering, the type of majority carriers in the EPs is the same as the source and drain carriers in the ON-state and different in the OFF-state. The main idea is to limit the injection of extra minority carriers from the drain and source sides into the OFF-state channel while eliminating the requirement for reservoirs to improve the electrical characteristics in nano dimensions. The results demonstrate that the energy-delay-production (EDP) and gate delay are decreased from 5.023 × 10⁻²⁶ to 6.26 × 10⁻²⁸ j.s and 114 to 0.58 ps compared to conventional structures, respectively. And also, the ON/OFF current ratio improved by 1000 times compared to conventional structures. In addition, the effect of the gate's work function and the doping densities of the EPs on the electrical properties of the suggested structure are examined in this work. As a result, when compared to conventional structures, the proposed structure can be a viable alternative.