Properties of a highly compensated high-purity germanium

The electrical and optical properties of a compensated high-purity germanium (HPGe) single crystal was investigated using various characterization techniques. Aluminium, boron, and phosphorus were the major residual shallow-level impurities identified by photothermal ionization spectroscopy (PTIS). Hall effect measurements performed at low temperatures (77 K) along the growth length reveal that the crystal is p-type at the top and bottom, while n-type in the middle part with a net carrier concentration in the range of 10¹⁰–10¹¹ cm⁻³. The obtained very high resistivity (2.3 ⨯ 10⁸ Ω·cm) at 91 K in the temperature-dependent Hall measurements (TDH) at the bottom part of the crystal indicates a high level of compensation (84%) of charge carriers by deep-level impurities or defects with an activation energy near 0.195 eV. The highest hole mobility \(({\mu _p} = ~46700\,{\rm{c}}{{\rm{m}}^2}\,/{\rm{V}}\cdot{\rm{s}})\) $({\mu }_p=46700\mathrm{c}{\mathrm{m}}^2/\mathrm{V}·\mathrm{s})$   at 77 K was obtained at the top part, which is moderately compensated. The carrier lifetimes of the grown HPGe crystals were measured using microwave-detected photoconductivity (MDP) at room temperature. The average carrier lifetime decreases from the top to bottom part of the crystal from 130 to 60 µs, which is less than that of the usually observed values in HPGe crystals due to a strong compensation.