Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT

This study focuses on the Electrostatic, linearity, and analogue/RF parameters of a single heterojunction AlGaAs/GaAs-based high electron mobility transistor (HEMT). The device performance for multiple biases has been evaluated using different figures of merit. The Electrostatic, linearity, and analogue/RF performance have been analyzed from the on-wafer DC and RF measurements. A high ON-state current (31.72 mA) and a smaller sub-threshold swing (82.2 mV/dec) have been achieved. Parameters relating to linearities, such as g_m, g_m2, g_m3, VIP₂, VIP₃, IIP₃, 1-dB compression point, IMD₃, THD and analogue/RF parameters like TGF, g_ds, A_v, C_gs, C_gd, C_gg, f_T and f_max have been analyzed under different V_ds, and excellent results have been obtained for all the bias voltages. Higher values of g_m, VIP₂, VIP₃, IIP₃, 1-dB compression point, and lower values of g_m2, g_m3, IMD₃, and THD have been obtained. The RF parameters have likewise yielded significant results in a similar manner. The device is revealed to have remarkable linearity and amplifying ability upon investigating the parameters as mentioned above.