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Fabrication of high-performance double-sided self-biased ZnO/P3HT based hybrid photodetector

  • T. K. Lahane,
  • J. Agrawal,
  • V. Singh

摘要

Self-powered photodiodes operate independently and wirelessly without any external power supply. It has various applications, such as wearable and implantable medical devices, portable detecting systems, and smart home appliances. However, developing high-performance self-powered photodetectors is still difficult. In this work, the P3HT film thickness has been optimized to enhance the self-biased photo response under green light illumination. A double-sided solution-processable ITO/ZnO/P3HT/AgNWs photodiode has been fabricated with silver nanowire (AgNWs) top electrodes of 81% transmittance and 20 Ω/sq sheet resistance. Under optimal conditions, the device showed the highest photosensitivity of ~ 106, responsivity of 99 mA/W, detectivity of 1 × 1013 Jones, and EQE of 23% at 520 nm (5 mW/cm2) wavelength in self-bias mode. It also exhibited a fast photo response time of < 20 ms (instrumental limit). This work paves the way to fabricate affordable, high-performing self-bias photodetectors. Additionally, the flexibility of Ag NWs could be further used to develop flexible photodetectors.