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<p>This study investigates the synthesis of laser-induced graphene (LIG) on polyimide using a 450-nm blue diode laser, aiming to correlate processing parameters with charge transport mechanisms. By systematically varying laser power (1–15%), structural characterizations (SEM, Raman, XPS) revealed a transition from a porous, defective network to a dense, sp<sup>2</sup>-rich graphitic structure. This evolution significantly reduced intrinsic resistivity, achieving a minimum of ~ 1.16 mΩ.cm and a maximum in-plane crystallite size (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(L_{a}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>L</mi> <mi>a</mi> </msub> </math></EquationSource> </InlineEquation>) of ~ 24 nm at 8% power due to lattice healing and improved carrier mobility. Furthermore, temperature-dependent resistivity analysis (100–450 K) indicated a shift in the conduction mechanism. Transport transitions from fluctuation-induced tunneling in low-power defective states to thermally activated grain-boundary hopping in the optimized nanocrystalline LIG. These findings provide a practical optimization guide for 450-nm LIG, clarifying how structural changes influence electrical performance in flexible electronics.</p>

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Optimization of 450-nm laser-induced graphene: structural evolution and electronic study

  • 期刊论文

  • 发表日期：

    2026年7月23日

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  • Sefer Haşim Burgaz,
  • Züleyha Özçelik Çetinel,
  • Alper Çetinel

摘要

This study investigates the synthesis of laser-induced graphene (LIG) on polyimide using a 450-nm blue diode laser, aiming to correlate processing parameters with charge transport mechanisms. By systematically varying laser power (1–15%), structural characterizations (SEM, Raman, XPS) revealed a transition from a porous, defective network to a dense, sp2-rich graphitic structure. This evolution significantly reduced intrinsic resistivity, achieving a minimum of ~ 1.16 mΩ.cm and a maximum in-plane crystallite size ( \(L_{a}\) L a ) of ~ 24 nm at 8% power due to lattice healing and improved carrier mobility. Furthermore, temperature-dependent resistivity analysis (100–450 K) indicated a shift in the conduction mechanism. Transport transitions from fluctuation-induced tunneling in low-power defective states to thermally activated grain-boundary hopping in the optimized nanocrystalline LIG. These findings provide a practical optimization guide for 450-nm LIG, clarifying how structural changes influence electrical performance in flexible electronics.