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<p>Gallium nitride (GaN) high electron mobility transistors (HEMTs) operating in enhancement mode (E-mode) represent a significant advancement in high-power electronic device technology. These devices demonstrate enhanced electrical characteristics, improved efficiency, and greater reliability when compared with conventional silicon-based transistor technologies. This review examines the recent developments in E-mode GaN HEMT design and fabrication, with particular focus on p-GaN gate structures, metal–insulator–semiconductor (MIS) configurations, innovative heterostructure approaches, and three-dimensional architectures. This review addresses how these architectural innovations contribute to improved threshold voltage management, enhanced breakdown voltage capabilities, and reduced on-state resistance. Additionally, the review explores material-level advancements including scandium-doped layers, advanced dielectric interface engineering, and two-dimensional material integration, highlighting their contributions to enhanced device stability and operational reliability in demanding high-voltage and high-temperature environments. Performance characteristics relevant to diverse applications, including electric vehicle power systems, renewable energy conversion, data center infrastructure, and telecommunications networks, are systematically analyzed. The review concludes by identifying current technological challenges and outlining prospective research pathways for advancing E-mode GaN HEMT capabilities in next-generation power electronic systems.</p>

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Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications

  • 期刊论文

  • 发表日期：

    2026年5月26日

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  • A. Rajalingam,
  • Shyni P. Nair,
  • S. Maheswari,
  • N. M. Mary Sindhuja,
  • B. Senthilkumar,
  • V. Samuthira Pandi

摘要

Gallium nitride (GaN) high electron mobility transistors (HEMTs) operating in enhancement mode (E-mode) represent a significant advancement in high-power electronic device technology. These devices demonstrate enhanced electrical characteristics, improved efficiency, and greater reliability when compared with conventional silicon-based transistor technologies. This review examines the recent developments in E-mode GaN HEMT design and fabrication, with particular focus on p-GaN gate structures, metal–insulator–semiconductor (MIS) configurations, innovative heterostructure approaches, and three-dimensional architectures. This review addresses how these architectural innovations contribute to improved threshold voltage management, enhanced breakdown voltage capabilities, and reduced on-state resistance. Additionally, the review explores material-level advancements including scandium-doped layers, advanced dielectric interface engineering, and two-dimensional material integration, highlighting their contributions to enhanced device stability and operational reliability in demanding high-voltage and high-temperature environments. Performance characteristics relevant to diverse applications, including electric vehicle power systems, renewable energy conversion, data center infrastructure, and telecommunications networks, are systematically analyzed. The review concludes by identifying current technological challenges and outlining prospective research pathways for advancing E-mode GaN HEMT capabilities in next-generation power electronic systems.