Copper nanoparticle sintering technology for power electronics packaging-preparation, process, and performance
摘要
Power electronic devices centered on third-generation semiconductors (e.g., SiC, GaN), have garnered substantial interest in electronics manufacturing due to their distinct properties, including a wide bandgap, high breakdown voltage, superior thermal conductivity, and excellent chemical stability. These materials are particularly advantageous in extreme operating environments, such as photovoltaic energy storage, high-voltage power distribution, rail transportation, aerospace, and 5G/6G applications. However, these harsh operating conditions, particularly elevated temperatures (> 300 °C), impose stringent requirements on the mechanical strength and reliability of packaging materials. Copper nanoparticle (Cu NP) paste has emerged as a promising candidate owing to its low cost, electromigration resistance, and excellent electrical and thermal conductivity, and its capability for “low-temperature sintering and high-temperature operation”. Nevertheless, it faces challenges related to high oxidation susceptibility and inferior sintering performance compared to silver (Ag) NP paste. This review presents the current state of research on synthesizing Cu NP powders, focusing on the primary preparation methods for Cu, Cu–Ag, and Cu–Ni NPs, and analyzing the underlying mechanisms of surface organic coatings and various core–shell structures. Subsequently, the latest research advancements in the Cu NP sintering technology are summarized in terms of sintering processes, performance regulation, sintering mechanisms, and molecular dynamics (MD) simulation results, in conjunction with the authors’ experimental findings. Additionally, the reliability problems of Cu sintered joints reported in recent research are evaluated. Finally, the limitations of current Cu NP sintering technology are discussed, along with an outlook on future development trends and research opportunities.
Graphical abstract