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<p>The effects of nitrogen ion irradiation on Cu₂ZnSnS₄ (CZTS) thin films deposited on FTO glass were systematically investigated. Films were irradiated by nitrogen ion at energies 80 and 100&#xa0;keV, with fluences variation as 6.71 × 10<sup>16</sup>, 9.39 × 10<sup>16</sup>, and 1.21 × 10<sup>17</sup>&#xa0;ions/cm<sup>2</sup>. Structural, optical, morphological, compositional, and electrical properties were studied using XRD, Raman spectroscopy, UV–Vis spectrophotometry, SEM, EDS, and I–V measurements under dark and illuminated conditions. The preferred (112) orientation remained unchanged after irradiation, while crystallite size decreased from 29.06&#xa0;nm (pristine) to 20.46&#xa0;nm (80&#xa0;keV) and 21.0&#xa0;nm (100&#xa0;keV) at the highest fluence. The optical band gap increased with fluence, reaching 1.67&#xa0;eV and 1.70&#xa0;eV for 80 and 100&#xa0;keV, respectively. I–V characteristics showed nonlinear Schottky-type behavior, with low dark current and enhanced photocurrent after irradiation. These findings demonstrate that nitrogen ion irradiation effectively tunes the structural, optical and electrical properties of CZTS thin films, useful for optoelectronic applications.</p>

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Role of nitrogen ion irradiation in modifying the properties of CZTS thin films for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年7月5日

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  • Kalyani D. Tikote,
  • Ashish B. Thorat,
  • Pradyumna P. Waifalkar,
  • Santosh K. Mahapatra,
  • Shailendra S. Dahiwale,
  • Sanjay D. Dhole

摘要

The effects of nitrogen ion irradiation on Cu₂ZnSnS₄ (CZTS) thin films deposited on FTO glass were systematically investigated. Films were irradiated by nitrogen ion at energies 80 and 100 keV, with fluences variation as 6.71 × 1016, 9.39 × 1016, and 1.21 × 1017 ions/cm2. Structural, optical, morphological, compositional, and electrical properties were studied using XRD, Raman spectroscopy, UV–Vis spectrophotometry, SEM, EDS, and I–V measurements under dark and illuminated conditions. The preferred (112) orientation remained unchanged after irradiation, while crystallite size decreased from 29.06 nm (pristine) to 20.46 nm (80 keV) and 21.0 nm (100 keV) at the highest fluence. The optical band gap increased with fluence, reaching 1.67 eV and 1.70 eV for 80 and 100 keV, respectively. I–V characteristics showed nonlinear Schottky-type behavior, with low dark current and enhanced photocurrent after irradiation. These findings demonstrate that nitrogen ion irradiation effectively tunes the structural, optical and electrical properties of CZTS thin films, useful for optoelectronic applications.