<p>As electronic devices continue to develop, scholar has become increasingly concerned about the energy storage performance and stability of ceramic capacitors. This study employs a high-entropy strategy based on factors influencing energy storage performance, which enhances the configurational entropy of the material by introducing the wide-bandgap components Ca(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> (CMT). The introduction of Ta<sub>2</sub>O<sub>5</sub> and MgO fundamentally inhibits the carrier transition, thereby increasing the breakdown field strength of the material, and also controls grain size to increase grain boundary density, thus preparing high-entropy ceramics (1-<i>x</i>)(Ba<sub>0.12</sub>Sr<sub>0.28</sub>K<sub>0.15</sub>Bi<sub>0.3</sub>Na<sub>0.15</sub>)TiO<sub>3</sub>-<i>x</i>Ca(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> (<i>x</i> = 0, 0.12, 0.15, 0.18, 0.21) (BSKBNT-<i>x</i>CMT). This addresses the issue of breakdown field strength in dielectric ceramics. For the <i>x</i> = 0.18 sample, doping reduced the grain size from 0.68 to 0.55&#xa0;μm, increasing the density of high-resistance grain boundaries. Additionally, the bandgap widened from 3.04 to 3.15&#xa0;eV. The grain refinement and wide-bandgap grain refinement synergistically suppressed carrier migration, achieving an energy storage density (<i>W</i><sub>rec</sub>) of 3.03&#xa0;J/cm<sup>3</sup> and an energy storage efficiency (<i>η)</i> of 89.6% at electric field of 300&#xa0;kV/cm. Within the frequency range of 1–100&#xa0;Hz, the variation rates of <i>W</i><sub>rec</sub> and <i>η</i> are less than 2.8% and 0.5%. Respectively, within the temperature range of 25–150&#xa0;°C, the variation rates of <i>W</i><sub>rec</sub> and <i>η</i> are less than 7.3% and 2.4%; moreover, <i>η</i> remains above 90%. The material exhibits exceptional frequency and temperature stability. Bandgap engineering and grain size control are effective approaches to enhancing energy storage density and efficiency.</p>

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Effects of wide-bandgap component Ca(Mg1/3Ta2/3)O3 on temperature stability and energy storage properties in Ba0.12Sr0.28K0.15Bi0.3Na0.15TiO3 high-entropy ceramics

  • Xin Li,
  • Jiangyi Lv,
  • Senwei Liu,
  • Lingyun Wu,
  • Sikai Zhou,
  • Haozhi Li

摘要

As electronic devices continue to develop, scholar has become increasingly concerned about the energy storage performance and stability of ceramic capacitors. This study employs a high-entropy strategy based on factors influencing energy storage performance, which enhances the configurational entropy of the material by introducing the wide-bandgap components Ca(Mg1/3Ta2/3)O3 (CMT). The introduction of Ta2O5 and MgO fundamentally inhibits the carrier transition, thereby increasing the breakdown field strength of the material, and also controls grain size to increase grain boundary density, thus preparing high-entropy ceramics (1-x)(Ba0.12Sr0.28K0.15Bi0.3Na0.15)TiO3-xCa(Mg1/3Ta2/3)O3 (x = 0, 0.12, 0.15, 0.18, 0.21) (BSKBNT-xCMT). This addresses the issue of breakdown field strength in dielectric ceramics. For the x = 0.18 sample, doping reduced the grain size from 0.68 to 0.55 μm, increasing the density of high-resistance grain boundaries. Additionally, the bandgap widened from 3.04 to 3.15 eV. The grain refinement and wide-bandgap grain refinement synergistically suppressed carrier migration, achieving an energy storage density (Wrec) of 3.03 J/cm3 and an energy storage efficiency (η) of 89.6% at electric field of 300 kV/cm. Within the frequency range of 1–100 Hz, the variation rates of Wrec and η are less than 2.8% and 0.5%. Respectively, within the temperature range of 25–150 °C, the variation rates of Wrec and η are less than 7.3% and 2.4%; moreover, η remains above 90%. The material exhibits exceptional frequency and temperature stability. Bandgap engineering and grain size control are effective approaches to enhancing energy storage density and efficiency.