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<p>Graphene, a two-dimensional carbon allotrope, is renowned for its exceptional mechanical and electronic properties, making it a promising material for various applications, including next-generation electronics, high-capacity energy storage, and advanced composite materials. For device applications, the growth of microscale graphene grains is crucial to minimize grain-boundary scattering and enhance electronic performance. The ability to achieve such growth strongly depends on controlling domain morphology by precisely tuning synthesis parameters. In this study, few-layer graphene films were synthesized on copper substrates using thermal chemical vapor deposition. By optimizing growth parameters such as temperature, pressure, gas flow rate, and composition, we achieved few-layer graphene with domain sizes exceeding 225&#xa0;µm, as confirmed by Field emission scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy. Furthermore, we demonstrate that the synergistic role of thermalized argon momentum transfer and hydrogen-assisted modifications governs both nucleation density and lateral domain growth. These results provide a clearer understanding of the growth mechanisms and establish a pathway for scalable synthesis of micro-scale graphene grain suitable for high-performance electronic applications.</p> Graphical abstract

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Role of thermal argon and hydrogen in nucleation control and domain evolution of CVD-grown graphene

  • 期刊论文

  • 发表日期：

    2026年3月27日

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  • Monika Dhiman,
  • Pooja Yadav,
  • Arup Samanta

摘要

Graphene, a two-dimensional carbon allotrope, is renowned for its exceptional mechanical and electronic properties, making it a promising material for various applications, including next-generation electronics, high-capacity energy storage, and advanced composite materials. For device applications, the growth of microscale graphene grains is crucial to minimize grain-boundary scattering and enhance electronic performance. The ability to achieve such growth strongly depends on controlling domain morphology by precisely tuning synthesis parameters. In this study, few-layer graphene films were synthesized on copper substrates using thermal chemical vapor deposition. By optimizing growth parameters such as temperature, pressure, gas flow rate, and composition, we achieved few-layer graphene with domain sizes exceeding 225 µm, as confirmed by Field emission scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy. Furthermore, we demonstrate that the synergistic role of thermalized argon momentum transfer and hydrogen-assisted modifications governs both nucleation density and lateral domain growth. These results provide a clearer understanding of the growth mechanisms and establish a pathway for scalable synthesis of micro-scale graphene grain suitable for high-performance electronic applications.

Graphical abstract