<p>This study employed a high-pressure and high-temperature (HPHT) melt infiltration method, using high-purity CrSe powders and ZnSe crystals as raw materials, to successfully prepare Cr²⁺: ZnSe ceramics. The synthesis experiments were conducted under a pressure of 2.0&#xa0;GPa for a duration of 0.5&#xa0;h, within a temperature range of 900–1300&#xa0;°C. The results indicated that all synthesized samples exhibited the cubic zinc blende structure, with Cr²⁺ successfully substituting Zn²⁺ sites to form a single-phase solid solution. XPS analysis confirmed that chromium exists in a stable divalent state (Cr²⁺) within the crystal lattice. Microstructural analysis revealed that 1100&#xa0;°C was the optimal synthesis temperature, yielding uniform grain growth, high density, and good lattice integrity. EDS mapping results demonstrated a uniform distribution of Cr²⁺ within the ZnSe lattice under the HPHT conditions, achieving a mass fraction of 0.15%. This study proves that the HPHT technique effectively promotes rapid and uniform doping of Cr²⁺ into ZnSe, overcoming the limitations of traditional thermal diffusion methods, such as long processing cycles and inhomogeneous doping, thereby providing a new approach for preparing high-performance Cr²⁺: ZnSe laser gain media.</p>