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<p>Sb<sub>2</sub>Se<sub>2</sub>Te is a novel ternary V–VIA topological insulator, which shows significant potential as a material for optoelectronic devices. In this work, the Ag-Sb<sub>2</sub>Se<sub>2</sub>Te/SnSe<sub>2</sub> heterojunction-based PEC photodetector was fabricated using a two-step drop-coating method. The obtained photodetector has a responsivity of 71.94&#xa0;μA W<sup>−1</sup> at 0&#xa0;V bias under 400&#xa0;nm illumination, which is about 30 times higher than that of the Sb<sub>2</sub>Se<sub>2</sub>Te photodetector. Furthermore, the photodetectors exhibited an increased responsivity of 283.49&#xa0;μA W<sup>−1</sup> at a bias voltage of −0.2&#xa0;V. The performance enhancement is attributed to the Ag modification and formation of a Z-scheme heterojunction, which facilitates the light absorption and efficient charge separation and transfer. This study provides a potential strategy for designing high-performance ternary V-VIA semiconductor-based photodetectors.</p> Graphical Abstract <p>In this study, the Ag-Sb<sub>2</sub>Se<sub>2</sub>Te/SnSe<sub>2</sub> heterojunction-based PEC photodetector was fabricated using a two-step drop-coating method. The Ag-Sb<sub>2</sub>Se<sub>2</sub>Te/SnSe<sub>2</sub> heterostructure achieves a photocurrent density and responsivity of 1.11&#xa0;μA cm<sup>−2</sup> and 71.94&#xa0;μA W<sup>−1</sup> at 0&#xa0;V bias under 400&#xa0;nm illumination, which shows ~ 28 times and ~ 34 times increase compared to the Sb<sub>2</sub>Se<sub>2</sub>Te based photodetectors, respectively. This study provides a potential strategy for designing high-performance ternary V-VIA semiconductor-based photodetectors.</p> <p></p>

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Construction of Ag-Sb2Se2Te/SnSe2 heterojunction for self-powered photoelectrochemical photodetector

  • 期刊论文

  • 发表日期：

    2026年2月3日

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  • Mingxuan Zou,
  • Zhuo Gao,
  • Mingyue Pan,
  • Feng Teng,
  • Haibo Fan,
  • Jiaming Song,
  • Yang Jiao,
  • Xuexia He,
  • Peng Hu

摘要

Sb2Se2Te is a novel ternary V–VIA topological insulator, which shows significant potential as a material for optoelectronic devices. In this work, the Ag-Sb2Se2Te/SnSe2 heterojunction-based PEC photodetector was fabricated using a two-step drop-coating method. The obtained photodetector has a responsivity of 71.94 μA W−1 at 0 V bias under 400 nm illumination, which is about 30 times higher than that of the Sb2Se2Te photodetector. Furthermore, the photodetectors exhibited an increased responsivity of 283.49 μA W−1 at a bias voltage of −0.2 V. The performance enhancement is attributed to the Ag modification and formation of a Z-scheme heterojunction, which facilitates the light absorption and efficient charge separation and transfer. This study provides a potential strategy for designing high-performance ternary V-VIA semiconductor-based photodetectors.

Graphical Abstract

In this study, the Ag-Sb2Se2Te/SnSe2 heterojunction-based PEC photodetector was fabricated using a two-step drop-coating method. The Ag-Sb2Se2Te/SnSe2 heterostructure achieves a photocurrent density and responsivity of 1.11 μA cm−2 and 71.94 μA W−1 at 0 V bias under 400 nm illumination, which shows ~ 28 times and ~ 34 times increase compared to the Sb2Se2Te based photodetectors, respectively. This study provides a potential strategy for designing high-performance ternary V-VIA semiconductor-based photodetectors.