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<p>In this paper, we develop a synergistic framework combining technology computer-aided design (TCAD) and multiscale computer-aided engineering (CAE) method based on Monte Carlo (MC), molecular dynamics (MD), and object kinetic Monte Carlo (OKMC) using an effective defect information transmitting scheme to study the effects of displacement damage on device electrical properties. The displacement damage effects of SiGe heterojunction bipolar transistors (HBTs) are simulated based on our framework, and the results are consistent with experimental observations. The simulation results show that displacement damage imposes significant adverse effects on the electrical properties of the device, which is closely related to the concentration and distribution of the defects after irradiation. An observed increase in base currents with higher particle fluences is attributed to the enhanced non-radiative recombination caused by these defects. Moreover, in consistent with the experimental observations, the positive correlation between the degradation of current gain and the particle fluences is determined, with the numerical change in the reciprocal of the current gain falling within the experimental error margin.</p>

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Synergistic application model of CAE and TCAD for displacement radiation effects in SiGe HBTs

  • 期刊论文

  • 发表日期：

    2026年2月12日

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  • Haoyang Jiang,
  • Yuhang Jing,
  • Huyang Li,
  • Huimin Geng,
  • Jianqun Yang,
  • Xingji Li

摘要

In this paper, we develop a synergistic framework combining technology computer-aided design (TCAD) and multiscale computer-aided engineering (CAE) method based on Monte Carlo (MC), molecular dynamics (MD), and object kinetic Monte Carlo (OKMC) using an effective defect information transmitting scheme to study the effects of displacement damage on device electrical properties. The displacement damage effects of SiGe heterojunction bipolar transistors (HBTs) are simulated based on our framework, and the results are consistent with experimental observations. The simulation results show that displacement damage imposes significant adverse effects on the electrical properties of the device, which is closely related to the concentration and distribution of the defects after irradiation. An observed increase in base currents with higher particle fluences is attributed to the enhanced non-radiative recombination caused by these defects. Moreover, in consistent with the experimental observations, the positive correlation between the degradation of current gain and the particle fluences is determined, with the numerical change in the reciprocal of the current gain falling within the experimental error margin.