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<p>This work demonstrates the growth of amorphous Ge<sub>2</sub>S<sub>3</sub> on GaN(0001) surfaces at room temperature using physical vapor deposition, in contrast to earlier studies focused on crystalline Ge–S phases. The Ge<sub>2</sub>S<sub>3</sub>/GaN system was examined by atomic force microscopy, optical transmission, Raman scattering (RS), and X-ray diffraction (XRD), while in situ X-ray and ultraviolet photoelectron spectroscopies provided chemical and electronic characterization. The formation of the Ge<sub>2</sub>S<sub>3</sub> phase was confirmed through a combination of stoichiometry analysis, core-level binding energies, RS and XRD spectra. The electron affinity of the cleaned GaN(0001) surface was found to be 3.15&#xa0;eV, whereas that for the Ge<sub>2</sub>S<sub>3</sub> layer deposited on GaN was 4.05&#xa0;eV. The absorption edge of the formed Ge<sub>2</sub>S<sub>3</sub> layer, measured by optical transmission, yielded a band gap of 2.05&#xa0;eV. The valence band offset at the Ge<sub>2</sub>S<sub>3</sub>/GaN interface was determined to be 2.2&#xa0;eV, and the conduction band offset was 0.85&#xa0;eV. The combination of a chalcogenide glass with a wide-band-gap semiconductor, fabricated under ultrahigh vacuum conditions, results in a type-II band alignment with a large valence band offset. This study highlights the potential of amorphous Ge<sub>2</sub>S<sub>3</sub> as a novel route to heterostructure engineering for GaN-based devices, effectively circumventing lattice mismatch constraints.</p>

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Band alignment of amorphous Ge2S3 and GaN(0001)

  • 期刊论文

  • 发表日期：

    2026年1月28日

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  • M. Grodzicki,
  • A. Sabik,
  • P. Mazur,
  • A. K. Tołłoczko,
  • R. Lewandków,
  • A. Trembułowicz,
  • D. Majchrzak,
  • J. Serafińczuk,
  • J. Kopaczek,
  • J. Brona,
  • R. Kudrawiec

摘要

This work demonstrates the growth of amorphous Ge2S3 on GaN(0001) surfaces at room temperature using physical vapor deposition, in contrast to earlier studies focused on crystalline Ge–S phases. The Ge2S3/GaN system was examined by atomic force microscopy, optical transmission, Raman scattering (RS), and X-ray diffraction (XRD), while in situ X-ray and ultraviolet photoelectron spectroscopies provided chemical and electronic characterization. The formation of the Ge2S3 phase was confirmed through a combination of stoichiometry analysis, core-level binding energies, RS and XRD spectra. The electron affinity of the cleaned GaN(0001) surface was found to be 3.15 eV, whereas that for the Ge2S3 layer deposited on GaN was 4.05 eV. The absorption edge of the formed Ge2S3 layer, measured by optical transmission, yielded a band gap of 2.05 eV. The valence band offset at the Ge2S3/GaN interface was determined to be 2.2 eV, and the conduction band offset was 0.85 eV. The combination of a chalcogenide glass with a wide-band-gap semiconductor, fabricated under ultrahigh vacuum conditions, results in a type-II band alignment with a large valence band offset. This study highlights the potential of amorphous Ge2S3 as a novel route to heterostructure engineering for GaN-based devices, effectively circumventing lattice mismatch constraints.