Ultrahigh resistivity and low-loss Mo6+-doped Ni-Zn ferrites for high-frequency inductive and EMI suppression components
摘要
Mo6⁺-substituted Ni0.5Zn0.5Fe₂₋ₓMoₓO₄ (x = 0.00–0.10) ferrites were synthesized via a solid-state reaction at 1150 °C, aiming to tailor their microstructure and functional properties for high-frequency applications. X-ray diffraction confirmed the formation of a single-phase cubic spinel structure (Fd3m), with a systematic decrease in lattice parameter (8.361 → 8.348 Å) due to the incorporation of Mo⁶⁺ ions (0.59 Å) in place of Fe3⁺ (0.645 Å). TEM revealed densely packed grains with significantly reduced porosity (from 34.8 to 19.6%), while FTIR and EDS analyses confirmed preferential Mo⁶⁺ substitution at octahedral sites. This substitution suppressed Fe2⁺/Fe3⁺ electron hopping, resulting in a notable enhancement in bulk resistivity (up to 2756 kΩ cm), surpassing values reported for Co- and Ti-doped counterparts by 2.3 × and 275 × , respectively. The optimal composition (x = 0.10) exhibited low dielectric loss (tanδ = 2.03 at 1 kHz) and retained soft magnetic behavior (Hc = 21 Oe, Ms = 71.6 emu/g). This work provides the first demonstration of Mo6+ dual role as a charge compensator (suppressing Fe2⁺ formation) and grain boundary modifier (reducing interfacial losses), offering a breakthrough in designing low-loss ferrites. These findings demonstrate the potential of Mo⁶⁺ doping as an effective strategy to develop high-performance ferrites for advanced components like miniaturized inductive elements and electromagnetic interference (EMI) suppression applications where high resistivity and soft magnetism are critical.