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<p>This work presents an experimental investigation of the temperature dependence of spectral and total emissivity of microstructured highly doped silicon, a class of black silicon (BSi) surfaces, which behaves as an ultra-broadband and ultra-black behavior, nearly a perfect blackbody up to a wavelength of 10&#xa0;µm. We make a comparison with a flat surface of similar silicon taken as a reference. Direct infrared (IR) emissivity measurements were performed under normal incidence across 2–20&#xa0;μm spectral range and at temperatures between 100 and 350&#xa0;°C, using a newly developed experimental setup. While previous studies have demonstrated the excellent absorptivity of BSi at room temperature, our results confirm that BSi maintains near-unity emissivity up to a wavelength of 10&#xa0;μm even at high temperatures. Notably, the total hemispherical emissivity is found to increase slightly from ~ 0.95 at 150&#xa0;°C up to ~ 0.98 at 350&#xa0;°C. These values significantly exceed by far those of the flat Si reference samples. The results are further compared with absorptivity measurements at room temperature obtained from FTIR spectroscopy and with literature data. This study provides a comprehensive temperature resolved and spectrally resolved emissivity properties for highly doped BSi, establishing its suitability for advanced thermal applications such as thermophotovoltaic emitters, thermal infrared light sources, and radiative cooling.</p>

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Temperature-dependent spectral emissivity of microstructured silicon

  • 期刊论文

  • 发表日期：

    2025年12月23日

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  • Elissa Akiki,
  • Georges Hamaoui,
  • Armande Herve,
  • Yang An,
  • Frédéric Marty,
  • Jianping Zou,
  • Arthur Fortin,
  • Tarik Bourouina,
  • Philippe Basset,
  • Agnès Delmas,
  • Elyes Nefzaoui

摘要

This work presents an experimental investigation of the temperature dependence of spectral and total emissivity of microstructured highly doped silicon, a class of black silicon (BSi) surfaces, which behaves as an ultra-broadband and ultra-black behavior, nearly a perfect blackbody up to a wavelength of 10 µm. We make a comparison with a flat surface of similar silicon taken as a reference. Direct infrared (IR) emissivity measurements were performed under normal incidence across 2–20 μm spectral range and at temperatures between 100 and 350 °C, using a newly developed experimental setup. While previous studies have demonstrated the excellent absorptivity of BSi at room temperature, our results confirm that BSi maintains near-unity emissivity up to a wavelength of 10 μm even at high temperatures. Notably, the total hemispherical emissivity is found to increase slightly from ~ 0.95 at 150 °C up to ~ 0.98 at 350 °C. These values significantly exceed by far those of the flat Si reference samples. The results are further compared with absorptivity measurements at room temperature obtained from FTIR spectroscopy and with literature data. This study provides a comprehensive temperature resolved and spectrally resolved emissivity properties for highly doped BSi, establishing its suitability for advanced thermal applications such as thermophotovoltaic emitters, thermal infrared light sources, and radiative cooling.