<p>We report here a new approach for the synthesis of p-type Ca<sub>2.5</sub>Ag<sub>0.3</sub>Ho<sub>0.2</sub>Co<sub>4</sub>O<sub>9</sub> ceramic materials utilizing the sol–gel method, which facilitates the formation of homogeneous, finely-grained powders. To determine their suitability, the synthesized materials are subjected to a comprehensive assessment that includes thermal, structural, morphological, and thermoelectric properties. For a thorough examination, these materials were put through a variety of characterization procedures, such as DTA-TG, FTIR, XRD, XPS, SEM, and TM. The process parameters were determined based on a combination of scientific results obtained from DTA-TG, FTIR, XRD, XPS, and SEM analyses. Based on these findings, the process involved drying at 100&#xa0;°C for 3&#xa0;h, followed by decomposition at 200&#xa0;°C for 2&#xa0;h, oxidation and calcination at 800&#xa0;°C for 2&#xa0;h, and sintering at 900&#xa0;°C for 24&#xa0;h under oxidizing conditions. This procedure ensured the formation of a complete stoichiometric, plate-like, preferred textured, distorted rock salt-type layered Ca<sub>2.5</sub>Ag<sub>0.3</sub>Ho<sub>0.2</sub>Co<sub>4</sub>O<sub>9</sub> semiconductor ceramic phase. Thermoelectric measurements indicated that a doubly doped sample with the Ca<sub>2.5</sub>Ag<sub>0.3</sub>Ho<sub>0.2</sub>Co<sub>4</sub>O<sub>9</sub> chemical composition reached the power factor of 0.65 mW/mK<sup>2</sup> at 800&#xa0;°C. The electrical resistivity of the p-type Ca<sub>2.5</sub>Ag<sub>0.3</sub>Ho<sub>0.2</sub>Co<sub>4</sub>O<sub>9</sub> ceramic material was determined to be 13.18 mΩcm, and the Seebeck coefficient was 292.66&#xa0;μV/K at 800&#xa0;°C. </p>

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Synthesis, characterization, and thermoelectric properties of Ca2.5Ag0.3Ho0.2Co4O9 materials by sol–gel processing

  • Enes Kilinc,
  • Fatih Uysal,
  • Mucahit Abdullah Sari,
  • Huseyin Kurt,
  • Erdal Celik

摘要

We report here a new approach for the synthesis of p-type Ca2.5Ag0.3Ho0.2Co4O9 ceramic materials utilizing the sol–gel method, which facilitates the formation of homogeneous, finely-grained powders. To determine their suitability, the synthesized materials are subjected to a comprehensive assessment that includes thermal, structural, morphological, and thermoelectric properties. For a thorough examination, these materials were put through a variety of characterization procedures, such as DTA-TG, FTIR, XRD, XPS, SEM, and TM. The process parameters were determined based on a combination of scientific results obtained from DTA-TG, FTIR, XRD, XPS, and SEM analyses. Based on these findings, the process involved drying at 100 °C for 3 h, followed by decomposition at 200 °C for 2 h, oxidation and calcination at 800 °C for 2 h, and sintering at 900 °C for 24 h under oxidizing conditions. This procedure ensured the formation of a complete stoichiometric, plate-like, preferred textured, distorted rock salt-type layered Ca2.5Ag0.3Ho0.2Co4O9 semiconductor ceramic phase. Thermoelectric measurements indicated that a doubly doped sample with the Ca2.5Ag0.3Ho0.2Co4O9 chemical composition reached the power factor of 0.65 mW/mK2 at 800 °C. The electrical resistivity of the p-type Ca2.5Ag0.3Ho0.2Co4O9 ceramic material was determined to be 13.18 mΩcm, and the Seebeck coefficient was 292.66 μV/K at 800 °C.