Enhancing the performance of photoelectrochemical photodetector based on ZnO films by adjusting interfacial barrier
摘要
Photoelectrochemical photodetector as the hot research topic in photodetection filed has attached many attentions, and enhancing its performance through adjusting the barrier at interfaces is an effective route. In this study, an Ag film was prepared between the ITO conductive glass and ZnO nanoparticles by an electrochemical deposition method. Compared with the original ZnO electrode, the photocurrent of the Ag/ZnO electrode increases from 0.101 to 0.171 mA cm−2, and the light response increases from 379.9 to 720.8 μA W−1. The inserted Ag layer changed the contact mode from Schottky to Ohmic contact, reducing the potential barrier of electron transport to the substrate. At the same time, due to the reflection of light by Ag layer, the absorbance of ZnO is increased. This simple combination helps to improve the detection performance of ZnO electrode and shows that this method can be used to prepare high-performance PEC photodetectors.