<p>As a new generation of semiconductor material, silicon carbide (SiC), its high-efficiency and low-damage chemical mechanical polishing (CMP) is the key to realize excellent surface quality and high performance of the device. CeO₂-based polishing slurry, due to the unique chemical activity and moderate mechanical properties of CeO₂, shows high potential for application in SiC-CMP and has become a new research hotspot in the field of SiC-CMP. In this paper, the research progress of CeO₂-based polishing slurry in SiC-CMP is summarized, focusing on the mechanism of the chemical environment of CeO₂-based polishing slurry on SiC-CMP, including water molecules, oxidants, and pH. Meanwhile, the influence of CeO₂ abrasive properties on SiC-CMP and the development of CeO₂ composite abrasive are also analyzed, and the research status of the energy field-assisted CMP is summarized in the end. By systematically elucidating the role of each factor, it provides theoretical guidance and technical reference for the optimization of CeO₂-based polishing slurry performance in SiC-CMP process and the improvement in SiC-based device fabrication level.</p>