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<p>Ferroelectric Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N thin films are grown on highly doped and plasma treated (100) <i>n</i>-type Si. We demonstrate ferroelectricity for <i>x</i> = &lt; 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the <i>n</i>-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140&#xa0;μC/cm<sup>2</sup> and coercive field values as low as 4&#xa0;MV/cm at 1&#xa0;Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between <i>x</i> = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5&#xa0;nm SiN<sub><i>x</i></sub> layer at the Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N interface post-plasma treatment and deposition. The first ~ 5&#xa0;nm of Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N is crystallographically defective. Using the <i>n</i>-type Si substrate, we demonstrate Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N thickness scaling to 25&#xa0;nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the <i>n</i>-type Si enables a streamlined growth process for Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N for a wide range of Al<sub>1−<i>x</i></sub>B<sub><i>x</i></sub>N compositions and layer thicknesses.</p>

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Ferroelectric Al1−xBxN sputtered thin films on n-type Si bottom electrodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月2日

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  • Ian Mercer,
  • Chloe Skidmore,
  • Sebastian Calderon,
  • Elizabeth Dickey,
  • Jon-Paul Maria

摘要

Ferroelectric Al1−xBxN thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm2 and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al1−xBxN crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiNx layer at the Al1−xBxN interface post-plasma treatment and deposition. The first ~ 5 nm of Al1−xBxN is crystallographically defective. Using the n-type Si substrate, we demonstrate Al1−xBxN thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al1−xBxN for a wide range of Al1−xBxN compositions and layer thicknesses.