Scholarlink

<p>The solution-processed oxide thin-film transistors (TFTs) are one of the most promising candidates for advanced display applications. However, a large number of native defects in oxide semiconductor engrain an inherent trade-off between mobility and stability in oxide TFTs, especially for single-layer-channel TFTs. In this work, an indium-tin-oxide/indium-gallium-oxide (ITO/IGO) heterogeneous-bilayer-channel TFT is fabricated to solve this problem. The ITO/IGO TFT exhibits a high mobility of 17.44 cm<sup>2</sup> V<sup>−1</sup>&#xa0;s<sup>−1</sup>, which is nearly 10 times higher than that of the single-layer-channel IGO TFTs. Furthermore, the ITO/IGO TFT has superior electrical characteristics, such as threshold voltage of − 0.4&#xa0;V, subthreshold swing of 112.6&#xa0;mV/dec, on/off-state current ratio of 2.81 × 10<sup>7</sup>, and a good stability performance. In ITO/IGO system, the ITO thin film acts as a carrier generation layer, while the IGO thin film ensures a low off-state current and enhances stability. Moreover, the difference of bandgap between ITO and IGO thin films leads to form an energy barrier to confine carriers at two-dimensional direction, which can increase the mobility of TFTs. The heterogeneous-bilayer-channel strategy may pave the way for solution-processed TFT technology.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhanced high overall performance of solution-processed ITO/IGO thin-film transistor via heterogeneous-bilayer channel

  • 期刊论文

  • 发表日期：

    2025年8月24日

查看全文
  • Meng Xu,
  • Xiadong Zhao,
  • Tu Ha,
  • Longlong Chen,
  • Xifeng Li,
  • Jianhua Zhang

摘要

The solution-processed oxide thin-film transistors (TFTs) are one of the most promising candidates for advanced display applications. However, a large number of native defects in oxide semiconductor engrain an inherent trade-off between mobility and stability in oxide TFTs, especially for single-layer-channel TFTs. In this work, an indium-tin-oxide/indium-gallium-oxide (ITO/IGO) heterogeneous-bilayer-channel TFT is fabricated to solve this problem. The ITO/IGO TFT exhibits a high mobility of 17.44 cm2 V−1 s−1, which is nearly 10 times higher than that of the single-layer-channel IGO TFTs. Furthermore, the ITO/IGO TFT has superior electrical characteristics, such as threshold voltage of − 0.4 V, subthreshold swing of 112.6 mV/dec, on/off-state current ratio of 2.81 × 107, and a good stability performance. In ITO/IGO system, the ITO thin film acts as a carrier generation layer, while the IGO thin film ensures a low off-state current and enhances stability. Moreover, the difference of bandgap between ITO and IGO thin films leads to form an energy barrier to confine carriers at two-dimensional direction, which can increase the mobility of TFTs. The heterogeneous-bilayer-channel strategy may pave the way for solution-processed TFT technology.