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<p>This study investigates the thermoelectric properties of oriented, non-stoichiometric AgBiTe<sub>2</sub> thin films, focusing on performance enhancement through band modification and localized lattice engineering. Band modification, primarily induced by the non-stoichiometric composition, leads to increased intrinsic defect concentrations and the formation of AgTe secondary phases, which enhance electrical conductivity with rising temperature. In parallel, localized lattice engineering, achieved via post-annealing, improves crystallinity, introduces energy filtering grain boundaries, and creates localized states, all of which contribute to a significant increase in the Seebeck coefficient, from 22.1&#xa0;µV/K (as-deposited) to 42.35&#xa0;µV/K (annealed at 673&#xa0;K). These combined effects result in a thermoelectric power factor of 8.2&#xa0;µW/cm K<sup>2</sup> at 450&#xa0;K. Structural analyses (XRD and SEM) confirm the presence of AgTe phases and well-defined grain boundaries formed during annealing. Overall, the study highlights how the synergistic roles of band modification and localized lattice engineering can effectively enhance the thermoelectric performance of AgBiTe<sub>2</sub> thin films, positioning them as promising candidates for thermoelectric applications.</p>

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Enhancing thermoelectric performance in AgBiTe2 alloys through band modification and localized lattice engineering

  • 期刊论文

  • 发表日期：

    2025年8月3日

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  • M. Yasir Ali,
  • Arslan Ashfaq,
  • Adnan Ali,
  • Khalid Mehmood,
  • Meznah M. Alanazi,
  • Manar Fahad Albarak,
  • Ahmed H. Ragab

摘要

This study investigates the thermoelectric properties of oriented, non-stoichiometric AgBiTe2 thin films, focusing on performance enhancement through band modification and localized lattice engineering. Band modification, primarily induced by the non-stoichiometric composition, leads to increased intrinsic defect concentrations and the formation of AgTe secondary phases, which enhance electrical conductivity with rising temperature. In parallel, localized lattice engineering, achieved via post-annealing, improves crystallinity, introduces energy filtering grain boundaries, and creates localized states, all of which contribute to a significant increase in the Seebeck coefficient, from 22.1 µV/K (as-deposited) to 42.35 µV/K (annealed at 673 K). These combined effects result in a thermoelectric power factor of 8.2 µW/cm K2 at 450 K. Structural analyses (XRD and SEM) confirm the presence of AgTe phases and well-defined grain boundaries formed during annealing. Overall, the study highlights how the synergistic roles of band modification and localized lattice engineering can effectively enhance the thermoelectric performance of AgBiTe2 thin films, positioning them as promising candidates for thermoelectric applications.