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<p>Ternary AgSbS<sub>2</sub> semiconductor was prepared by one-step mechanochemical synthesis using a planetary ball mill from elemental silver, antimony, and sulfur after 30&#xa0;min of milling. The cubic AgSbS<sub>2</sub> with an approximate crystallite size of 56&#xa0;nm was successfully produced, as confirmed by the Rietveld refinement. The Raman spectrum confirmed the formation of pure AgSbS<sub>2</sub>. Morphology characterization using SEM demonstrated the homogeneity of the prepared AgSbS<sub>2</sub>. UV–Vis spectroscopy showed the suitability of the prepared AgSbS<sub>2</sub> for photovoltaic applications, as the optical band gap energy value of 1.67&#xa0;eV and 1.68&#xa0;eV was determined from absorbance and transmission measurements for AgSbS<sub>2</sub> powder and AgSbS<sub>2</sub> thin film, respectively. Photoresponse of AgSbS<sub>2</sub> was verified by photocurrent spectroscopy as well as I–V measurements. The photoresponsive current showed 2.3 times increase at 1&#xa0;V for AgSbS<sub>2</sub> powder and 1.6 times increase for AgSbS<sub>2</sub> thin film under illumination compared to the current in the dark state. To verify the photoelectric properties for photovoltaic application Si/AgSbS<sub>2</sub> diodes were prepared by depositing a thin AgSbS<sub>2</sub> film from the AgSbS<sub>2</sub> powder on n- Si substrate. The I–V characteristics of diodes show a relatively good rectification effect and sensitivity to illumination in spectral range 500–1100&#xa0;nm.</p>

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Rapid one-step mechanochemical synthesis of ternary semiconductor AgSbS2 for photovoltaic applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年8月15日

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  • Erika Dutková,
  • Matej Baláž,
  • Jaroslav Kováč,
  • María Jesús Sayagués,
  • Maximilian Wohlgemuth,
  • Zdenka Lukáčová Bujňáková,
  • Lenka Findoráková,
  • Jaroslav Kováč Jr.,
  • Soňa Kováčová,
  • Marián Marton,
  • Patrik Jacko,
  • Matej Bereš

摘要

Ternary AgSbS2 semiconductor was prepared by one-step mechanochemical synthesis using a planetary ball mill from elemental silver, antimony, and sulfur after 30 min of milling. The cubic AgSbS2 with an approximate crystallite size of 56 nm was successfully produced, as confirmed by the Rietveld refinement. The Raman spectrum confirmed the formation of pure AgSbS2. Morphology characterization using SEM demonstrated the homogeneity of the prepared AgSbS2. UV–Vis spectroscopy showed the suitability of the prepared AgSbS2 for photovoltaic applications, as the optical band gap energy value of 1.67 eV and 1.68 eV was determined from absorbance and transmission measurements for AgSbS2 powder and AgSbS2 thin film, respectively. Photoresponse of AgSbS2 was verified by photocurrent spectroscopy as well as I–V measurements. The photoresponsive current showed 2.3 times increase at 1 V for AgSbS2 powder and 1.6 times increase for AgSbS2 thin film under illumination compared to the current in the dark state. To verify the photoelectric properties for photovoltaic application Si/AgSbS2 diodes were prepared by depositing a thin AgSbS2 film from the AgSbS2 powder on n- Si substrate. The I–V characteristics of diodes show a relatively good rectification effect and sensitivity to illumination in spectral range 500–1100 nm.