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<p>This review presents a comprehensive analysis of gallium nitride (GaN)-based light-emitting diode (LED) technology, examining the fundamental physics, current challenges, and emerging applications that define this rapidly evolving field. GaN-based LEDs have revolutionized lighting, displays, and communication technologies since their commercial introduction in the 1990s. We critically examine the materials science underpinning these devices, including quantum well structures, doping mechanisms, and epitaxial growth techniques that have enabled significant performance improvements. Particular attention is given to persistent challenges such as efficiency droop, the quantum-confined Stark effect, and thermal management issues that continue to limit device performance. The review thoroughly analyzes the emergence of micro-LED technology, with focus on size-dependent efficiency phenomena, surface recombination effects, and novel fabrication approaches to mitigate these challenges. Recent advancements in sidewall passivation, tunnel junctions, and epitaxial structure optimization are evaluated for their effectiveness in enhancing external quantum efficiency. We examine established commercial applications in general illumination and automotive lighting alongside cutting-edge developments including micro-LED displays achieving ultrahigh brightness exceeding 1,000,000 nits, multigigabit visible light communication systems with modulation bandwidths over 1&#xa0;GHz, optogenetic neural stimulation devices, and flexible micro-LED arrays for conformable biomedical implants.</p>

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Advancing gallium nitride LED technology: principles, challenges, and future directions

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • V. Jacintha,
  • S. Maheswari,
  • G. Kalpanadevi,
  • A. Lakshmi Narayana,
  • N. Vinodhkumar

摘要

This review presents a comprehensive analysis of gallium nitride (GaN)-based light-emitting diode (LED) technology, examining the fundamental physics, current challenges, and emerging applications that define this rapidly evolving field. GaN-based LEDs have revolutionized lighting, displays, and communication technologies since their commercial introduction in the 1990s. We critically examine the materials science underpinning these devices, including quantum well structures, doping mechanisms, and epitaxial growth techniques that have enabled significant performance improvements. Particular attention is given to persistent challenges such as efficiency droop, the quantum-confined Stark effect, and thermal management issues that continue to limit device performance. The review thoroughly analyzes the emergence of micro-LED technology, with focus on size-dependent efficiency phenomena, surface recombination effects, and novel fabrication approaches to mitigate these challenges. Recent advancements in sidewall passivation, tunnel junctions, and epitaxial structure optimization are evaluated for their effectiveness in enhancing external quantum efficiency. We examine established commercial applications in general illumination and automotive lighting alongside cutting-edge developments including micro-LED displays achieving ultrahigh brightness exceeding 1,000,000 nits, multigigabit visible light communication systems with modulation bandwidths over 1 GHz, optogenetic neural stimulation devices, and flexible micro-LED arrays for conformable biomedical implants.