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<p>Vacancy engineering has been proposed as an effective strategy to regulate the intrinsic electrochemical activity of nickel-based transition metal selenides. In this study, we successfully developed a novel method to synthesize selenium vacancy-rich 3D nanocomposites (NiSe<sub>2−x</sub>@C) using Ni-MOFs as a precursor combined with a selenate-assisted etching strategy. The forming selenium vacancies can modulate the electronic structure of the nanomaterials, generate more electrochemically active sites, enhance the electrical conductivity of the materials and reduce the charge transfer resistance, which can improve the charge storage capacity of the electrode materials. As a supercapacitor electrode material, it exhibits good electrochemical performance with a high specific capacitance of 645.5&#xa0;F&#xa0;g<sup>−1</sup> at 1&#xa0;A&#xa0;g<sup>−1</sup> and a capacitance retention of 77.3% at 10&#xa0;A&#xa0;g<sup>−1</sup>, showing excellent rate performance. In addition, an asymmetric supercapacitor (ASC) assembled with activated carbon (AC) provided a high energy density of 28.02&#xa0;Wh&#xa0;kg<sup>−1</sup> at a power density of 773.78&#xa0;W&#xa0;kg<sup>−1</sup> and maintained a capacity retention of 82.8% after 10,000 cycles. This study provides valuable insights for the preparation of high-performance nickel-based transition metal selenide electrode materials with abundant selenium vacancies.</p>

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Selenic acid etching-assisted vacancy engineering design and synthesis of high-performance supercapacitor electrode material NiSe2−x@C

  • 期刊论文

  • 发表日期：

    2025年8月26日

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  • Huaide Liu,
  • Chao Liu,
  • Guanghong Zhao,
  • Yuan Wei,
  • Yuhui Gao,
  • Shiming Jia,
  • Ziyan Yu,
  • Yanyan Jiang,
  • Yulan Zhang,
  • Gaofeng Shi,
  • Guoying Wang

摘要

Vacancy engineering has been proposed as an effective strategy to regulate the intrinsic electrochemical activity of nickel-based transition metal selenides. In this study, we successfully developed a novel method to synthesize selenium vacancy-rich 3D nanocomposites (NiSe2−x@C) using Ni-MOFs as a precursor combined with a selenate-assisted etching strategy. The forming selenium vacancies can modulate the electronic structure of the nanomaterials, generate more electrochemically active sites, enhance the electrical conductivity of the materials and reduce the charge transfer resistance, which can improve the charge storage capacity of the electrode materials. As a supercapacitor electrode material, it exhibits good electrochemical performance with a high specific capacitance of 645.5 F g−1 at 1 A g−1 and a capacitance retention of 77.3% at 10 A g−1, showing excellent rate performance. In addition, an asymmetric supercapacitor (ASC) assembled with activated carbon (AC) provided a high energy density of 28.02 Wh kg−1 at a power density of 773.78 W kg−1 and maintained a capacity retention of 82.8% after 10,000 cycles. This study provides valuable insights for the preparation of high-performance nickel-based transition metal selenide electrode materials with abundant selenium vacancies.