<p>Based on theoretical calculations (PBE + <i>G</i>₀<i>W</i>₀ + BSE), novel two-dimensional bisilicon carbide (Si₂C) monolayer is systematically investigated under biaxial strains. The stability of pristine Si₂C monolayer has been confirmed by its phonon spectrum, and its dynamic stability can be kept across a broad strain range. The explored monolayer exhibiting a buckling configuration is predicted to be an indirect semiconductor with a moderate energy gap. The nature and magnitude of the bandgap can be significantly modulated through strain engineering, wherein a tensile strain of + 3.2% induces an indirect-direct bandgap transition. In addition, pristine Si₂C monolayer shows a significant light absorption (&gt; 10⁶&#xa0;cm⁻¹) for the visible part of incident solar radiation. Tensile strain can induce a prominent red-shift in the optical spectrum and significantly enhance near-infrared light absorption. As a result, the strain-tuned properties of novel Si₂C monolayer render it a promising semiconductor for optoelectronic applications.</p> Graphical abstract <p>Electro-optical properties of novel two-dimensional disilicon carbide under strains.</p> <p></p>