Scholarlink

<p>Gallium nitride (GaN) exhibits high theoretical capacity and low discharge potential, but unsatisfactory cycle performance resulting from the low conduction restrict its utilization in lithium-ion batteries (LIBs). In this work, Ni-substituted GaN nanowires (Ni-GaN NWs) were successfully prepared a chemical vapor deposition method. The as-prepared Ni-GaN NWs display modified surface electronic structure resulting from the generated defects and lattice strain, which is favorable of the rapid ions transfer. Notably, this Ni-GaN NWs electrode material exhibits a high capacity of 660.8&#xa0;mAh&#xa0;g<sup>−1</sup> at 0.1&#xa0;A&#xa0;g<sup>−1</sup> running 400 cycles. This work provides the possibility to fabricate high-performance GaN-based LIB anode materials.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ni-substitution inducing defect of GaN for highly efficient lithium ion battery

  • 期刊论文

  • 发表日期：

    2025年3月19日

查看全文
  • Ruishan Yang,
  • Liquan Pan,
  • Yan-Jie Wang,
  • Yifan Lai,
  • Zibo Zhai,
  • Changlong Sun,
  • Wenfang Li

摘要

Gallium nitride (GaN) exhibits high theoretical capacity and low discharge potential, but unsatisfactory cycle performance resulting from the low conduction restrict its utilization in lithium-ion batteries (LIBs). In this work, Ni-substituted GaN nanowires (Ni-GaN NWs) were successfully prepared a chemical vapor deposition method. The as-prepared Ni-GaN NWs display modified surface electronic structure resulting from the generated defects and lattice strain, which is favorable of the rapid ions transfer. Notably, this Ni-GaN NWs electrode material exhibits a high capacity of 660.8 mAh g−1 at 0.1 A g−1 running 400 cycles. This work provides the possibility to fabricate high-performance GaN-based LIB anode materials.

Graphical abstract