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<p>This work presents the effect of the rapid thermal annealing (RTA) process on the performance of Ti/MoO<sub>x</sub>/Pt resistive random access memory (RRAM). Compared with the device without RTA treatment, the device processed in vacuum RTA (300&#xa0;℃,80&#xa0;s) exhibits better resistance switching (RS) characteristics, including smaller forming voltage (V<sub>f</sub> = 5.7&#xa0;V) and set voltage (V<sub>set</sub> = 1.41&#xa0;V), stable high-resistance state (coefficient of variation = 5.91%) and 100 times storage window. This may be attributed to changes in oxygen vacancies (V<sub>O</sub>) content. The X-ray diffraction (XRD) analysis results indicate that the prepared MoO<sub>x</sub> thin films are all amorphous. X-ray photoelectron spectroscopic (XPS) analysis results indicate that vacuum RTA treatment increases the V<sub>O</sub> content in the MoO<sub>x</sub> dielectric layer, which may make it easier for thick conductive filaments to form. This leads to a reduction in the V<sub>f</sub> and V<sub>set</sub>, while also establishing a relatively fixed fracture position for conductive filaments, thereby achieving a stable high-resistance state. XPS depth profiling results of Device B before and after applying positive voltage indicate the formation of TiO<sub>x</sub> layer at the interface and the increase of V<sub>O</sub> in the MoO<sub>x</sub> dielectric layer (33.90% → 55.37%), which may indicate the establishment process of V<sub>O</sub> conductive filaments in the device. In addition, we have explored synaptic applications of RRAM devices with this structure and simulated a range of synaptic behaviors, demonstrating the potential of MoO<sub>x</sub>-based RRAM as an artificial synaptic device in neural morphology computing systems.</p>

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Improvement of MoOx-based RRAM performance by rapid thermal annealing process and its application in artificial synapse

  • 期刊论文

  • 发表日期：

    2025年1月21日

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  • Xiaolei Xu,
  • Wei Mi,
  • Di Wang,
  • Lin’an He,
  • He Liu,
  • Chenming Dong,
  • Chunbo Li,
  • Liwei Zhou,
  • Jinshi Zhao

摘要

This work presents the effect of the rapid thermal annealing (RTA) process on the performance of Ti/MoOx/Pt resistive random access memory (RRAM). Compared with the device without RTA treatment, the device processed in vacuum RTA (300 ℃,80 s) exhibits better resistance switching (RS) characteristics, including smaller forming voltage (Vf = 5.7 V) and set voltage (Vset = 1.41 V), stable high-resistance state (coefficient of variation = 5.91%) and 100 times storage window. This may be attributed to changes in oxygen vacancies (VO) content. The X-ray diffraction (XRD) analysis results indicate that the prepared MoOx thin films are all amorphous. X-ray photoelectron spectroscopic (XPS) analysis results indicate that vacuum RTA treatment increases the VO content in the MoOx dielectric layer, which may make it easier for thick conductive filaments to form. This leads to a reduction in the Vf and Vset, while also establishing a relatively fixed fracture position for conductive filaments, thereby achieving a stable high-resistance state. XPS depth profiling results of Device B before and after applying positive voltage indicate the formation of TiOx layer at the interface and the increase of VO in the MoOx dielectric layer (33.90% → 55.37%), which may indicate the establishment process of VO conductive filaments in the device. In addition, we have explored synaptic applications of RRAM devices with this structure and simulated a range of synaptic behaviors, demonstrating the potential of MoOx-based RRAM as an artificial synaptic device in neural morphology computing systems.