Review: recent advancements in photodetection utilizing inorganic, organic low-dimensional materials and their hybrids
摘要
Photodetectors (PDs) employing inorganic, organic, low-dimensional, and hybrid materials are making significant advances in photodetection technology, each presenting unique benefits and challenges. Inorganic materials, including silicon and III-V semiconductors, prevail in the domain because of their intrinsic stability, scalability, and established fabrication methods, but their spectrum response is frequently restricted. Organic materials, characterized by tunable optical properties and flexibility, provide a viable alternative, but they are impeded by challenges related to stability and sensitivity. Low-dimensional materials, comprising 0D, 1D, and 2D systems, demonstrate remarkable electrical and optical characteristics, facilitating the creation of ultrathin, very sensitive PDs. Nonetheless, extensive production and longevity continue to pose significant hurdles. Hybrid structures, which amalgamate the advantages of inorganic, organic, and low-dimensional materials, exhibit significant potential for improving essential performance parameters such as responsivity, spectrum range, and response time but encounter challenges related to integration and complexity. This review examines the advancements, limitations, and prospective directions of PDs in the range from ultraviolet (UV) to infrared (IR), utilizing various material systems, emphasizing the significance of hybrid and low-dimensional materials in the development of next-generation PDs.
Graphical Abstract