Microstructure, dielectric storage, ferroelectric polarization, and non-ferroelectric resistive switching characteristics of sol–gel-derived BZT ferroelectric films with tailored Zr content

This study investigates the synthesis and electrical property tailoring of BaZr_xTi_1-xO₃ (BZT) ferroelectric films through Zr content variation, offering new insights into non-ferroelectric resistive switching (RS) mechanisms. Using a sol–gel spin-coating technique, BZT films with varying Zr compositions (x = 0.2, 0.4, 0.6, and 0.8) were deposited on (001)-oriented Si substrates. Our investigation reveals the intricate influence of Zr doping on crystalline structure, morphology, dielectric response, energy storage capability, ferroelectric polarization, leakage current, conductive mechanism, and RS behaviors. Notably, lower Zr⁴⁺ substitution for Ti⁴⁺ enhances grain growth and morphology, resulting in superior dielectric properties. Films with Zr doping below 40% demonstrate exceptional crystalline quality, higher dielectric constant, increased polarization withstand voltage, and reduced leakage currents. Remarkably, above 40% Zr concentrations, despite declines in these properties, a robust RS phenomenon emerges and strengthens with increased Zr doping. This RS behavior, attributed to the formation and rupture of conductive filaments rather than ferroelectric polarization, opens new pathways for developing advanced non-volatile memory devices. Our findings offer a breakthrough in understanding and engineering BZT films, providing a strategic foundation for future electronic and memory applications.