Controllable adjustment of Ta and Cu material removal rate in TSV tantalum-based barrier layer planarization process

Through Silicon Via (TSV), a kind of 3D packaging technique, can improve chip integration based on “More than Moore” scheme. The larger copper area ratio at the TSV barrier layer interface requires strong adjustability of the removal rate selection ratio of copper, tantalum and TEOS–SiO₂, and stronger surface defect control and surface profile correction capabilities. In this paper, the effects of guanidine hydrochloride (GH) and 2,2′-[[(Methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol (TT-LYK) system on the tunability of Ta and Cu removal rate in chemical mechanical polishing (CMP) of TSV wafer barrier material were studied. GH can complex \({\text{TaO}}_{4}^{{3}-}\) ${\text{TaO}}_4^{3-}$ , while TT-LYK can form a protective film on the surface of Cu, thereby achieving rate regulation. The results showed that when the concentration of GH increased from 0 to 2 wt%, the removal rate selectivity ratio of Ta and Cu raised from 1.02:1 to 1.26:1. When the concentration of TT-LYK increased from 2.5 to 10 mmol/L, the removal rate selectivity ratio of Ta and Cu increased from 1.33:1 to 1.79:1, which verified that the GH and TT-LYK systems can efficiently regulate the rate and rate selection ratio of Ta and Cu. Surface roughness for both metals decreased from pre-polishing values of 5.03 nm to post-polishing values of 0.37 nm for Ta, from pre-polishing values of 5.33 nm to post-polishing values of 1.26 nm for Cu indicating that GH and TT-LYK systems significantly improved the surface quality.