Weak interlayer interaction and enhanced electron mobility in multilayer WS2 achieved through a layer-by-layer wet transfer approach
摘要
Semiconducting two-dimensional materials have gained significant attention in the field of electronics due to their exotic physical properties. In this study, multilayer WS2 films were achieved by employing a layer-by-layer wet transfer method from monolayer WS2 films synthesized through chemical vapor deposition. Analysis of photoluminescence and Raman spectra indicated a weak interaction between layers in the multilayer WS2 films. The electron mobility of WS2—based field effect transistors was significantly affected by the number of layers, with trilayer films exhibiting the highest mobility. Moreover, the FETs exhibited operational ability in ambient conditions, showing enhanced performance when utilizing HfO2 as the capping layer. Our findings provide a feasible way to achieve multilayer WS2 for high-performance FETs.
Graphical abstract