Rapid preparation of high thermal conductivity reduced graphene oxide films: interpolated benzene-assisted defect repair

Highly integrated and high-power devices place higher demands on the heat dissipation capability of heat sink components, and graphene meets the heat dissipation requirements due to its extremely high thermal conductivity of 5300 Wm⁻¹ K⁻¹ and good mechanical properties. Graphene by redox is one of the most promising methods for large-scale preparation of graphene; however, the quality of graphene prepared by different reduction processes varies. Herein, this paper presents a fast and efficient reduction process. Benzene was added as a reduction aid to increase the temperature from room to 2000 °C in 30 s and complete the reduction process. By this method, we obtained graphene with low defects and high thermal conductivity. The reduction process restored the lattice destroyed by the oxidation process, and the repaired material showed a higher crystallinity with a measured I_D/I_G of 0.18 (Ph-rGO-0, 0.58) and in-plane thermal conductivity of 510 ± 10 Wm⁻¹ K⁻¹. The in-plane thermal conductivity was increased by 262 Wm⁻¹ K⁻¹ compared with the film without benzene addition (Ph-rGO-0), which showed better homogeneous temperature performance and heat dissipation performance in practical applications. These results show the great potential for the application of graphene films prepared by this method in the field of heat dissipation materials.