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<p>As the semiconductor technology advances, soft errors caused by radiative particles are becoming a major concern for power-sensitive digital circuits in aerospace applications. Radiation hardening by design (RHBD) and magnetic tunnel junction (MTJ) are employed to cope with these issues. In this paper, two novel non-volatile flip-flops (FFs) are proposed, both of which can fully recover from all single- and double-node upsets (DNUs). The embedded MTJs are non-volatile and compatible with the conventional CMOS process. Comprehensive simulations show that the proposed flip-flops have excellent DNU-recovery and non-volatility at the cost of a low increase in area overhead. The proposed flip-flops reduce the delay by 21.99% and the power by 46.18%, on average, compared to state-of-the-art non-volatile flip-flops.</p>

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Nonvolatile Flip-Flop Designs with Soft Error Recovery Based on Magnetic Tunnel Junction and CMOS for Aerospace Applications

  • 期刊论文

  • 发表日期：

    2026年4月1日

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  • Zhongyu Gao,
  • Huan Liu,
  • Jie Song,
  • Zhiyuan Pei,
  • Wangjin Jiang,
  • Qijun Wang,
  • Xiaoqing Wen

摘要

As the semiconductor technology advances, soft errors caused by radiative particles are becoming a major concern for power-sensitive digital circuits in aerospace applications. Radiation hardening by design (RHBD) and magnetic tunnel junction (MTJ) are employed to cope with these issues. In this paper, two novel non-volatile flip-flops (FFs) are proposed, both of which can fully recover from all single- and double-node upsets (DNUs). The embedded MTJs are non-volatile and compatible with the conventional CMOS process. Comprehensive simulations show that the proposed flip-flops have excellent DNU-recovery and non-volatility at the cost of a low increase in area overhead. The proposed flip-flops reduce the delay by 21.99% and the power by 46.18%, on average, compared to state-of-the-art non-volatile flip-flops.