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<p>This study evaluates the radiation tolerance of unconventional NMOS transistor layouts against the conventional design. Using a 3D TCAD simulator, we analyzed the performance parameters of various layouts, including off-state leakage current, on-state current, saturation voltage, threshold voltage, trans-conductance and output resistance. Four NMOS devices, each with a distinct layout (conventional, edge-less(ELT), H-type, and Z-type), were fabricated using SCL’s 180nm process and subjected to total ionization dose (TID) testing up to 300K rad. Our findings demonstrate that the H-type layouts exhibit comparable TID tolerance to the edge-less layout. Z type layout is useful up to 100k rad radiation tolerance. These results offer valuable guidance to designers seeking to optimize design of analog/mixed-signal integrated circuits using radiation-hardened by design(RHBD) technique.</p>

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Analyzing the Effectiveness of Various NMOS Layouts for Total Ionizing Dose Hardening in 180nm CMOS

  • 期刊论文

  • 发表日期：

    2025年5月27日

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  • Munish Malik,
  • Neelam.R. Prakash,
  • Ajay Kumar,
  • Jasbir Kaur,
  • Amit Singh,
  • Kavita Monga

摘要

This study evaluates the radiation tolerance of unconventional NMOS transistor layouts against the conventional design. Using a 3D TCAD simulator, we analyzed the performance parameters of various layouts, including off-state leakage current, on-state current, saturation voltage, threshold voltage, trans-conductance and output resistance. Four NMOS devices, each with a distinct layout (conventional, edge-less(ELT), H-type, and Z-type), were fabricated using SCL’s 180nm process and subjected to total ionization dose (TID) testing up to 300K rad. Our findings demonstrate that the H-type layouts exhibit comparable TID tolerance to the edge-less layout. Z type layout is useful up to 100k rad radiation tolerance. These results offer valuable guidance to designers seeking to optimize design of analog/mixed-signal integrated circuits using radiation-hardened by design(RHBD) technique.