Modeling and Parasitic Extraction of the MM9 Transistor for GHz/THz CMOS RF Circuit Design

The goal of this paper is to decrease the number of complicated mathematical calculations for extracting the values of parasitic components and to examine the RF behavior of CMOS circuits rapidly by proposing a simple, bias-independent, three-capacitor π network small signal equivalent circuit of the sub-micrometer Philips MOS Model 9 (MM9) for high-frequency operations in the range of millimeter and terahertz. The performance of the suggested equivalent model and MM9 is compared by analyzing the simulated S-parameters in three distinct conditions: zero bias, active region, and saturation region. The frequency range considered for the analysis is from 1 GHz to 1 THz. Furthermore, the suggested model’s suitability is shown by its implementation in a bilateral buffer amplifier operating at frequencies 1 GHz, 10 GHz, 50 GHz, and 100 GHz. The simulation results of the suggested equivalent model have shown excellent agreement with MM9, ranging from 10 GHz to frequencies exceeding 1 THz.