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<p>LuFeO<sub>3</sub> (LFO) thin films are promising room-temperature multiferroic materials due to their excellent structural stability; however, their remanent polarization remains relatively low compared with that of BiFeO<sub>3</sub>. In this study, Bi-doped LuFeO<sub>3</sub> (BLFO) and undoped LFO thin films were deposited on Pt/Ta/glass substrates using pulsed laser deposition to elucidate the microstructural mechanisms responsible for polarization enhancement. X-ray diffraction and electron microscopy analyses reveal that Bi incorporation promotes preferential c-axis-oriented crystallization and significant grain coarsening, resulting in reduced defect density and improved ferroelectric domain uniformity. These microstructural improvements effectively suppress leakage current and enhance ferroelectric polarization. Furthermore, based on the Landau-Lifshitz-Kittel (LLK) scaling relationship between ferroelectric domain size and film thickness, the BLFO thin film exhibits higher domain-wall energy than the undoped LFO film. Electrical measurements using ferroelectric capacitors with 100&#xa0;μm electrodes demonstrate faster polarization switching in BLFO films compared to LFO films. These results provide microscopic observations consistent with the interpretation that Bi doping modulates microstructure and domain-wall energetics, thereby contributing to faster and more reliable ferroelectric switching in LuFeO<sub>3</sub> thin films.</p>

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Microscopy-based investigation of domain-wall energetics and enhanced ferroelectric switching in Bi-doped LuFeO3 thin films

  • 期刊论文

  • 发表日期：

    2026年3月18日

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  • Eunmi Lee,
  • Elbadawy A. Kamoun,
  • Jong Yeog Son,
  • Ahmed I. Ali

摘要

LuFeO3 (LFO) thin films are promising room-temperature multiferroic materials due to their excellent structural stability; however, their remanent polarization remains relatively low compared with that of BiFeO3. In this study, Bi-doped LuFeO3 (BLFO) and undoped LFO thin films were deposited on Pt/Ta/glass substrates using pulsed laser deposition to elucidate the microstructural mechanisms responsible for polarization enhancement. X-ray diffraction and electron microscopy analyses reveal that Bi incorporation promotes preferential c-axis-oriented crystallization and significant grain coarsening, resulting in reduced defect density and improved ferroelectric domain uniformity. These microstructural improvements effectively suppress leakage current and enhance ferroelectric polarization. Furthermore, based on the Landau-Lifshitz-Kittel (LLK) scaling relationship between ferroelectric domain size and film thickness, the BLFO thin film exhibits higher domain-wall energy than the undoped LFO film. Electrical measurements using ferroelectric capacitors with 100 μm electrodes demonstrate faster polarization switching in BLFO films compared to LFO films. These results provide microscopic observations consistent with the interpretation that Bi doping modulates microstructure and domain-wall energetics, thereby contributing to faster and more reliable ferroelectric switching in LuFeO3 thin films.