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<p>Piezoelectric activity of bismuth-layered structure ferroelectrics mainly originates from the spontaneous polarization along the <i>a</i>-<i>b</i> plane. To clarify the reasons for improvement in spontaneous polarization along the <i>a</i>-<i>b</i> plane, SrBi<sub>2</sub>Nb<sub>2 − <i>x</i></sub>(Cr<sub>1/3</sub>W<sub>2/3</sub>)<sub><i>x</i></sub>O<sub>9</sub> (SBN-CrW, <i>x</i> = 0.00, 0.02, 0.04 and 0.06) ceramics were synthesized by using the solid-state reaction method. Effect of the dopant on structure evolution of SBN-CrW ceramics was investigated by using X-ray diffraction and Raman spectroscopy. Resistivity and piezoelectricity are improved significantly by the introduced dopant. Curie temperature was decreased slightly with the increase in the dopant. Optimal electric properties were found in the SBN-CrW specimens with <i>x</i> = 0.04. Piezoelectric coefficient (<i>d</i><sub>33</sub>), Curie temperature (<i>T</i><sub>c</sub>) and planar electromechanical coupling factor (<i>k</i><sub>p</sub>) reach 22 pC/N, 396℃and 6.1%, respectively. The <i>c</i>-axis orientation determined by the ratio of <i>c</i>/<i>a</i> is identified as the key factor responsible for the improvement in the piezoelectricity of SBN-CrW ceramics.</p>

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Piezoelectricity improved and c-axis orientation restrained of SrBi2Nb2 − x(Cr1/3W2/3)xO9 piezoelectric ceramics

  • 期刊论文

  • 发表日期：

    2026年2月7日

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  • Xin Shao,
  • Pinyang Fang,
  • Baochen Xun,
  • Yujie Jia,
  • Wei Long,
  • Zengzhe Xi

摘要

Piezoelectric activity of bismuth-layered structure ferroelectrics mainly originates from the spontaneous polarization along the a-b plane. To clarify the reasons for improvement in spontaneous polarization along the a-b plane, SrBi2Nb2 − x(Cr1/3W2/3)xO9 (SBN-CrW, x = 0.00, 0.02, 0.04 and 0.06) ceramics were synthesized by using the solid-state reaction method. Effect of the dopant on structure evolution of SBN-CrW ceramics was investigated by using X-ray diffraction and Raman spectroscopy. Resistivity and piezoelectricity are improved significantly by the introduced dopant. Curie temperature was decreased slightly with the increase in the dopant. Optimal electric properties were found in the SBN-CrW specimens with x = 0.04. Piezoelectric coefficient (d33), Curie temperature (Tc) and planar electromechanical coupling factor (kp) reach 22 pC/N, 396℃and 6.1%, respectively. The c-axis orientation determined by the ratio of c/a is identified as the key factor responsible for the improvement in the piezoelectricity of SBN-CrW ceramics.