Dielectric relaxation in Ba0.95Bi0.05TiO3 and Ba0.85Bi0.15TiO3 ceramics synthesized by sol - gel method
摘要
In this work, bismuth doped barium titanate was synthesized by the sol– gel method. The samples were prepared using the chemical formula, Ba1 − xBixTiO3 in which compositions corresponding to x = 0.05 and 0.15 i.e., Ba0.95Bi0.05TiO3 (BBT5) and Ba0.85Bi0.15TiO3 (BBT15), showed a relaxor - type behavior. The temperature and frequency dependent dielectric measurements, were made which clearly showed that the peak corresponding to the dielectric maxima shifted towards higher temperature as frequency is increased in both the cases. The calculated values of the index of relaxation and the broadening parameter from the linear fit of the experimental data which was plotted according to the modified Curie– Weiss law also supported this behavior. At 500 kHz, the index of relaxation was calculated as 1.61 and 1.43 for BBT5 and BBT15 respectively and the broadening parameter as 121.5 K and 96.9 K for BBT5 and BBT15 respectively. It was also concluded that lower concentration of bismuth (x = 0.05) showed a better performance as compared to that of the higher one.