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<p>High-temperature solid-phase method were used to prepare lead-free piezoelectric ceramics of 0.67BiFeO<sub>3</sub>-0.3BaTi<sub>1 − <i>x</i></sub>Hf<sub><i>x</i></sub>O<sub><i>3</i></sub> and the effects of B-site Hf<sup>4+</sup> doping on the microstructure, dielectric properties, and ferroelectric properties of the ceramics were investigated systematically. The results have shown that partial substitution of Hf<sup>4+</sup> for Ti<sup>4+</sup> did not cause significant changes in the phase structure, and the components remained in the multi-phase boundary region where tetragonal and rhombohedral structures coexisted, resulting from the same electricity price and small differences of Hf<sup>4+</sup>/Ti<sup>4+</sup> ion radius. However, doping with Hf<sup>4+</sup> can effectively increase the content of Fe<sup>3+</sup> and reduce the leakage current of BFO-BT binary system. The Curie temperature of BFO-BT-0.05Hf ceramic is 387 ℃, which effectively maintaining the high Curie point of the BFO-BT binary system. The undoped BFO-BT exhibits a typical ferroelectric P-E hysteresis loop, with <i>P</i><sub><i>r</i></sub>=26.47µC/cm<sup>2</sup> and <i>E</i><sub><i>C</i></sub>=34.54&#xa0;kV/cm. After appropriate modification with Hf<sup>4+</sup>, the ferroelectric properties of the BFO-BT system were significantly improved, with <i>P</i><sub><i>r</i></sub> of 33.34 µC/cm<sup>2</sup> and <i>E</i><sub><i>C</i></sub> of 31.90&#xa0;kV/cm for BFO-BT-0.05Hf. The strain of BFO-BT-0.05Hf ceramic at room temperature is 0.19%. Meanwhile, the electric field induced-strain of the ceramic at 125 ℃ and 80&#xa0;kV/cm is 0.43%, and the high-field piezoelectric coefficient (<i>d</i><sub><i>33</i></sub><sup><i>*</i></sup>) is 543 pm/V.</p>

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Enhanced electric field induced strain of Hf4+ doped 0.67BiFeO3-0.33BaTiO3 lead-free piezoelectric ceramics

  • 期刊论文

  • 发表日期：

    2025年4月14日

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  • Dongfang Pang,
  • Minghui Chen,
  • Tianyong Zhang,
  • Guojun Huang

摘要

High-temperature solid-phase method were used to prepare lead-free piezoelectric ceramics of 0.67BiFeO3-0.3BaTi1 − xHfxO3 and the effects of B-site Hf4+ doping on the microstructure, dielectric properties, and ferroelectric properties of the ceramics were investigated systematically. The results have shown that partial substitution of Hf4+ for Ti4+ did not cause significant changes in the phase structure, and the components remained in the multi-phase boundary region where tetragonal and rhombohedral structures coexisted, resulting from the same electricity price and small differences of Hf4+/Ti4+ ion radius. However, doping with Hf4+ can effectively increase the content of Fe3+ and reduce the leakage current of BFO-BT binary system. The Curie temperature of BFO-BT-0.05Hf ceramic is 387 ℃, which effectively maintaining the high Curie point of the BFO-BT binary system. The undoped BFO-BT exhibits a typical ferroelectric P-E hysteresis loop, with Pr=26.47µC/cm2 and EC=34.54 kV/cm. After appropriate modification with Hf4+, the ferroelectric properties of the BFO-BT system were significantly improved, with Pr of 33.34 µC/cm2 and EC of 31.90 kV/cm for BFO-BT-0.05Hf. The strain of BFO-BT-0.05Hf ceramic at room temperature is 0.19%. Meanwhile, the electric field induced-strain of the ceramic at 125 ℃ and 80 kV/cm is 0.43%, and the high-field piezoelectric coefficient (d33*) is 543 pm/V.